STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 description the STC4614 is the n & pchannel enhancement mode p ower field effect transistor using high cell densit y dmos trench technology. this high density process i s especially tailored to minimize onstate resistan ce and provide superior switching performance. this de vice is particularly suited for low voltage applica tion such as notebook computer power management and othe r battery powered circuits, where highside switching, low inline power loss and resistance to transient are needed . pin configuration sop-8 part marking y year a product code ordering information part number package part marking STC4614s8rg sop8 STC4614 STC4614s8tg sop8 STC4614 process code : a ~ z ; a ~ z STC4614s8rg s8 : sop8 ; r : tape reel ; g : pb C free STC4614s8tg s8 : sop8 ; t : tube ; g : pb C fr ee feature n-channel 40v/10.0a, r ds(on) = 25mr(typ.) @v gs = 10v 40v/6.0a, r ds(on) = 32m @v gs = 4.5v p-channel 40v/10.0a, r ds(on) = 37m(typ.) @v gs = 10v 40v/5.0a, r ds(on) = 43m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical n p unit drainsource voltage v dss 40 40 v gatesource voltage v gss 20 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 10.0 7.0 10.0 6.0 a pulsed drain current i dm 20 20 a continuous source current (diode conduction) i s 2.5 2.5 a power dissipation t a =25 t a =70 p d 2.5 1.8 2.5 1.8 w operation junction temperature t j 150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient t Q 10sec sready state r ja 62.5 110 62.5 110 /w
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =10ma v gs =0v,i d =10ma n p 40 40 v gate threshold voltage v gs(th) v ds =vgs,i d =250 ua v ds =vgs,i d =250ua n p 1.0 1.0 3.0 3.0 v gate leakage current i gss v ds =0v,v gs = 20v v ds =0v,v gs = 20v n p 100 100 na zero gate voltage drain current i dss t j =55 v ds =32v,v gs =0v v ds =32v,v gs =0v n p 1 1 ua v ds =32v,v gs =0v v ds =32v,v gs =0v n p 5 5 onstate drain current i d(on) v ds R 5v,v gs =10v v ds Q 5v,v gs =10v n p 20 20 a drainsource onresistance r ds(on) v gs = 10v, i d =10.0a v gs =10v,i d =10.0a n p 0.025 0.035 0.030 0.043 v gs = 4.5v, i d =6.0a v gs =4.5v,i d =5.0 a n p 0.030 0.043 0.037 0.052 forward tran conductance g fs v ds =5v,i d =6.9a v ds =15v,i d =5.9a n p 22 13 s diode forward voltage v sd i s =1.0a,v gs =0v i s =1.7a,v gs =0v n p 1.2 1.2 v dynamic total gate charge q g n-channel v ds =20v,v gs =10v i d 6.0a p-channel v ds =20v,v gs =10v i d 5.0a n p 8.3 13.6 10.0 15.0 nc gatesource charge q gs n p 1.3 1.8 2.0 2.5 gatedrain charge q gd n p 2.3 4.0 3.0 5.0 turnon time t d(on) tr n-channel v ds =20v,r l =3.3 i d =1a,r gen =3 p-channel v ds =20v,r l =4.0 i d =1a,r gen =3 n p 4.6 7.7 6.0 11.5 ns n p 3.1 6.7 4 9 turnoff time t d(off) tf n p 15.6 26.2 21 34 n p 3.0 11.2 4.0 15
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 typical characterictics (n mos)
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 typical characterictics (n mos)
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 ypical characterictics (p mos)
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 typical characterictics (p mos)
STC4614 n&p pair enhancement mode mosfet 10.0a / 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4614 2008. v1 sop-8 package outline
|
